FDM3622 Fairchild Semiconductor, FDM3622 Datasheet - Page 5

• Manufacturer Part Number: FDM3622
• Description: MOSFET N-CH 100V 4.4A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDM3622

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDM3622; FDM3622TR

FDM3622 Rev.B
Typical Characteristics
1E-3
0.01
500
100
0.1
10
1
1
10
10
-4
-4
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
θ
JA
= 135
10
10
-3
-3
o
C/W
T
Figure 14.
J
= 25°C unless otherwise noted
10
10
Figure 13. Peak Current Capability
-2
-2
t, RECTANGULAR PULSE DURATION(s)
Transient Thermal Response Curve
t, PULSE WIDTH (s)
10
10
SINGLE PULSE
R
-1
θ
-1
JA
= 135
5
o
C/W
10
10
0
0
NOTES:
DUTY FACTOR: D = t
PEAK T
10
10
J
1
= P
1
DM
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
x Z
A
I = I
= 25
P
θJA
DM
25
1
/t
o
x R
C
2
o
θJA
10
10
C DERATE PEAK
150 T
----------------------- -
t
1
2
2
+ T
125
t
2
–
A
V
A
GS
= 10V
www.fairchildsemi.com
10
10
3
3