FDB14N30TM Fairchild Semiconductor, FDB14N30TM Datasheet

FDB14N30TM

Manufacturer Part Number

FDB14N30TM

Description

MOSFET N-CH 300V 14A D2PAK

Manufacturer

Fairchild Semiconductor

Series

UniFET™r

Datasheet

1.FDB14N30TM.pdf (8 pages)

Specifications of FDB14N30TM

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

290 mOhm @ 7A, 10V

Drain To Source Voltage (vdss)

300V

Current - Continuous Drain (id) @ 25° C

14A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

25nC @ 10V

Input Capacitance (ciss) @ Vds

1060pF @ 25V

Power - Max

140W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.29 Ohms @ 10 V

Forward Transconductance Gfs (max / Min)

10.5 S

Drain-source Breakdown Voltage

300 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

14 A

Power Dissipation

140 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDB14N30TMTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDB14N30TM

Manufacturer:

FSC

Quantity:

172

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDB14N30TM

Manufacturer:

ON/安森美

Quantity:

20 000

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FDB14N30 Rev. A

* When mounted on the minimum pad size recommended (PCB Mount)

FDB14N30

300V N-Channel MOSFET

Features

• 14A, 300V, R

• Low gate charge ( typical 18 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings

Thermal Characteristics

dv/dt

DSS

GSS

Symbol

θJC

θJA*

θJA

STG

rss

( typical 17 pF)

DS(on)

Drain-Source Voltage

Drain Current

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

= 0.29Ω @V

= 10 V

- Continuous (T

- Pulsed

- Derate above 25°C

Parameter

FDB Series

= 25°C)

-PAK

= 25°C)

= 100°C)

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

(Note 1)

(Note 2)

(Note 1)

(Note 3)

Min.

FDB14N30

-55 to +150

1.12

300

±30

330

140

300

8.4

4.5

Max.

0.89

62.5

UniFET

February 2007

www.fairchildsemi.com

Unit

W/°C

Unit

°C/W

V/ns

°C

Related parts for FDB14N30TM

FDB14N30TM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient* θJA* R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2007 Fairchild Semiconductor Corporation FDB14N30 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

Page 2

... Package Marking and Ordering Information Device Marking Device FDB14N30 FDB14N30TM Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT / Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics Top : 15.0 V 10.0 V 8.0 V 7.0 V 6 Bottom : 5 ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited ...

Page 5

Unclamped Inductive Switching Test Circuit & Waveforms FDB14N30 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

FDB14N30 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

Mechanical Dimensions FDB14N30 Rev. A D2-PAK 7 www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...

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