FDB14N30TM Fairchild Semiconductor, FDB14N30TM Datasheet
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FDB14N30TM
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FDB14N30TM Summary of contents
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... Thermal Resistance, Junction-to-Ambient* θJA* R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2007 Fairchild Semiconductor Corporation FDB14N30 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...
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... Package Marking and Ordering Information Device Marking Device FDB14N30 FDB14N30TM Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT / Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse ...
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Typical Performance Characteristics Figure 1. On-Region Characteristics Top : 15.0 V 10.0 V 8.0 V 7.0 V 6 Bottom : 5 ...
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Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited ...
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Unclamped Inductive Switching Test Circuit & Waveforms FDB14N30 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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FDB14N30 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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Mechanical Dimensions FDB14N30 Rev. A D2-PAK 7 www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...