FDB14N30TM Fairchild Semiconductor, FDB14N30TM Datasheet - Page 2
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FDB14N30TM
Manufacturer Part Number
FDB14N30TM
Description
MOSFET N-CH 300V 14A D2PAK
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDB14N30TM.pdf
(8 pages)
Specifications of FDB14N30TM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
290 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
1060pF @ 25V
Power - Max
140W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.29 Ohms @ 10 V
Forward Transconductance Gfs (max / Min)
10.5 S
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
14 A
Power Dissipation
140 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB14N30TMTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDB14N30TM
Manufacturer:
FSC
Quantity:
172
Part Number:
FDB14N30TM
Manufacturer:
ON/安森美
Quantity:
20 000
FDB14N30 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2.8mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
ΔBV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
d(on)
d(off)
f
DSS
GSSF
GSSR
r
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
ΔT
≤ 14A, di/dt ≤ 200A/μs, V
DSS
FDB14N30
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 14A, V
DD
= 50V, R
DD
≤ BV
FDB14N30TM
Parameter
Device
G
DSS
= 25Ω, Starting T
, Starting T
J
= 25°C
T
J
C
= 25°C
= 25°C unless otherwise noted
Package
D2-PAK
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
G
DS
GS
GS
GS
F
= 250μA, Referenced to 25°C
/dt =100A/μs
= 25Ω
= 300V, V
= 240V, T
= V
= 40V, I
= 25V, V
= 240V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 150V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 250μA
= 14A
= 14A
DS
GS
D
D
DS
= 7A
C
= 7A
GS
= 250μA
= 14A
= 14A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
330mm
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
24mm
Min.
300
3.0
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Typ.
0.24
10.5
815
150
105
235
0.3
4.5
1.6
17
20
30
75
18
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8
Quantity
Max Units
1060
-100
0.29
100
195
120
160
www.fairchildsemi.com
5.0
1.4
10
25
50
70
25
14
56
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1
800
V/°C
μA
μA
nA
nA
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
Ω
S
A
A
V