SI4686DY-T1-E3 Vishay, SI4686DY-T1-E3 Datasheet
SI4686DY-T1-E3
Specifications of SI4686DY-T1-E3
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SI4686DY-T1-E3 Summary of contents
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... Top View Ordering Information: Si4686DY-T1-E3 (Lead (Pb)-free) Si4686DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single-Pulse Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...
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... Si4686DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... On-Resistance vs. Drain Current and Gate Voltage 13 Total Gate Charge (nC) g Gate Charge Document Number: 73422 S09-0228-Rev. B, 09-Feb- thru 1.2 1.6 2 Si4686DY Vishay Siliconix 125 ° ° 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 1500 C iss 1200 900 600 C oss 300 C rss ...
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... Si4686DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.6 2.4 2.2 2 250 µA D 1.8 1.6 1.4 1.2 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.030 0.025 0.020 0.015 0.010 °C J 0.005 ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73422 S09-0228-Rev. B, 09-Feb-09 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4686DY Vishay Siliconix ...
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... Si4686DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...