SI4686DY-T1-E3 Vishay, SI4686DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4686DY-T1-E3
• Description: MOSFET N-CH 30V 18.2A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4686DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 13.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1220pF @ 15V
• Power - Max: 5.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0095 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13.8 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 18.2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4686DY-T1-E3TR

Si4686DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
50
10
- 50
1
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
T
T
0.4
I
J
D
J
25
= 150 °C
- Temperature (°C)
= 250 µA
50
0.6
Limited by R
75
0.8
T
0.001
J
0.01
100
0.1
= 25 °C
100
10
1
0.1
DS(on)
Safe Operating Area, Junction-to-Ambient
1.0
* V
125
GS
*
Single Pulse
T
> minimum V
A
150
V
1.2
= 25 °C
DS
- Drain-to-Source Voltage (V)
1
GS
at which R
0.030
0.025
0.020
0.015
0.010
0.005
DS(on)
10
50
40
30
20
10
0
0.01
3
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
4
0.1
V
100
GS
T
5
J
- Gate-to-Source Voltage (V)
= 25 °C
6
1
Time (s)
S09-0228-Rev. B, 09-Feb-09
Document Number: 73422
7
10
T
J
= 125 °C
I
8
D
= 13.8 A
100
9
600
10