SUD50N04-8M8P-4GE3 Vishay, SUD50N04-8M8P-4GE3 Datasheet
SUD50N04-8M8P-4GE3
Specifications of SUD50N04-8M8P-4GE3
SUD50N04-8M8P-GE3TR
SUD50N04-8M8P-GE3TR
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SUD50N04-8M8P-4GE3 Summary of contents
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... GS 40 0.0105 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N04-8m8P-4GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...
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... SUD50N04-8m8P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... C oss C rss Drain-to-Source Voltage (V) DS Capacitance Document Number: 68647 S10-0109-Rev. B, 18-Jan- 1.5 2.0 2.5 0.012 0.010 0.008 0.006 °C C 0.004 SUD50N04-8m8P Vishay Siliconix 100 ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs. Drain Current ...
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... SUD50N04-8m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.030 0.025 0.020 0.015 T J 0.010 °C J 0.005 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 500 400 300 200 100 0 0.0001 0.001 0.01 ...
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... Document Number: 68647 S10-0109-Rev. B, 18-Jan- Package Limited 100 T - Case Temperature (°C) C Current Derating*, Junction-to-Case 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SUD50N04-8m8P Vishay Siliconix 125 150 100 T - Junction Temperature (°C) J Power Derating, Junction-to-Case www.vishay.com ...
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... SUD50N04-8m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...