SUD50N04-05L Vishay, SUD50N04-05L Datasheet
SUD50N04-05L
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SUD50N04-05L Summary of contents
Page 1
... DS(on) 0.0054 @ 0.0069 @ TO-252 Top View Ordering Information: SUD50N04-05L—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Single Pulse Avalanche Current a Single Pulse Repetitive Avalanche Energy ...
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... SUD50N04-05L Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... S-40444—Rev. A, 15-Mar-04 New Product 120 100 0.010 − 0.008 0.006 _ 125 C 0.004 0.002 0.000 SUD50N04-05L Vishay Siliconix www.DataSheet4U.com Transfer Characteristics 125_C C 20 25_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUD50N04-05L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.7 1.4 1.1 0.8 0.5 −50 − − Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 125 100 75 50 Limited By Package 100 T − ...