FDMC2610 Fairchild Semiconductor, FDMC2610 Datasheet - Page 2

• Manufacturer Part Number: FDMC2610
• Description: MOSFET N-CH 200V 2.2A POWER33-8
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDMC2610

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 960pF @ 100V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 42 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC2610TR

Change To
Device #1 FDM6296
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
HAST2
PRCL
TMCL1
Device #2 FDMC2674
Package:
#Leads:
Precondition Description:
P/C
X
X
P/C
Standard
JESD22-A110 85%RH, 110C,
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Qualification Stress Test and Sample Size Detail
Conditions
24V
Delta 100CC, 2
Min cycle
Conditions
Readpoints
TP1
264
5000
100
TP2
10000
500
Read-
points
Read-
points
Samples
A
77
77
77
Sample
Sample
A
0
Pg. 2