FDU3N40TU Fairchild Semiconductor, FDU3N40TU Datasheet - Page 3

• Manufacturer Part Number: FDU3N40TU
• Description: MOSFET N-CH 400V 2A IPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDU3N40TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 225pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 30000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD3N40 / FDU3N40 Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
350
300
250
200
150
100
10
10
15
14
13
12
11
10
10
10
50
9
8
7
6
5
4
3
2
1
0
-1
-2
1
0
10
10
0
Drain Current and Gate Voltage
-1
-1
Top :
Bottom : 5.5 V
15.0 V
10.0 V
1
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
C
C
C
oss
iss
rss
V
V
DS
DS
2
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
10
0
0
V
3
GS
= 10V
C
C
C
4
iss
oss
rss
= C
= C
= C
V
gs
10
ds
gd
* Note : T
GS
+ C
10
+ C
1
* Notes :
= 20V
1. 250
2. T
1
gd
gd
(C
C
5
* Note :
ds
= 25
J
1. V
2. f = 1 MHz
µ
= shorted)
= 25
s Pulse Test
o
GS
C
o
C
= 0 V
6
3
10
10
10
10
10
12
10
1
0
-1
1
0
0.2
8
6
4
2
0
4
0
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.4
25
Variation vs. Source Current
5
o
C
150
150
0.6
1
o
C
o
C
V
V
GS
25
SD
Q
and Temperatue
0.8
, Gate-Source Voltage [V]
6
o
, Source-Drain voltage [V]
G
C
, Total Gate Charge [nC]
V
V
V
DS
DS
DS
= 80V
= 200V
= 320V
2
1.0
-55
7
o
C
1.2
3
1.4
8
* Notes :
* Notes :
* Note : I
1. V
2. 250
1. V
2. 250
1.6
GS
DS
4
µ
µ
= 0V
= 40V
9
s Pulse Test
s Pulse Test
D
www.fairchildsemi.com
= 3A
1.8
2.0
10
5