FDU3N40TU Fairchild Semiconductor, FDU3N40TU Datasheet - Page 8

• Manufacturer Part Number: FDU3N40TU
• Description: MOSFET N-CH 400V 2A IPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDU3N40TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 225pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 30000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Mechanical Dimensions
I-PAK
8
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FDD3N40 / FDU3N40 Rev. A