SI6423DQ-T1-E3 Vishay, SI6423DQ-T1-E3 Datasheet

MOSFET P-CH 12V 8.2A 8-TSSOP

SI6423DQ-T1-E3

Manufacturer Part Number
SI6423DQ-T1-E3
Description
MOSFET P-CH 12V 8.2A 8-TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI6423DQ-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 9.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
8.2A
Vgs(th) (max) @ Id
800mV @ 400µA
Gate Charge (qg) @ Vgs
110nC @ 5V
Power - Max
1.05W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Drain Quad Source
Resistance Drain-source Rds (on)
0.0085 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
8.2 A
Power Dissipation
1050 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-9.5A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
8.5mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-400mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI6423DQ-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6423DQ-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
44 515
Part Number:
SI6423DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
6 094
Part Number:
SI6423DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 818
Part Number:
SI6423DQ-T1-E3
0
Company:
Part Number:
SI6423DQ-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72257
S-80682-Rev. B, 31-Mar-08
Ordering Information: Si6423DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
V
DS
- 12
(V)
G
D
S
S
1
2
3
4
0.0085 at V
0.0106 at V
0.014 at V
TSSOP-8
Top View
R
DS(on)
J
a
= 150 °C)
GS
a
GS
GS
= - 1.8 V
(Ω)
= - 4.5 V
= - 2.5 V
P-Channel 12-V (D-S) MOSFET
a
8
7
6
5
D
S
S
D
a
A
I
= 25 °C, unless otherwise noted
- 9.5
- 8.5
- 7.5
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• Load Switch
G
Symbol
Symbol
T
R
R
J
V
V
P-Channel MOSFET
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
S*
D
®
Power MOSFET
Typical
- 1.35
- 9.5
10 s
100
1.5
1.0
- 8
60
35
* Source Pins 2, 3, 6 and 7
must be tied common.
- 55 to 150
- 12
- 30
± 8
Steady State
Maximum
- 0.95
- 8.2
- 6.5
1.05
0.67
120
83
45
Vishay Siliconix
Si6423DQ
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI6423DQ-T1-E3 Summary of contents

Page 1

... 1 TSSOP Top View Ordering Information: Si6423DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si6423DQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72257 S-80682-Rev. B, 31-Mar-08 8000 6400 4800 3200 1600 °C J 0.8 1.0 1.2 Si6423DQ Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si6423DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 400 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited (on 0 °C C Single Pulse ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72257. Document Number: 72257 S-80682-Rev. B, 31-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si6423DQ Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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