SI6423DQ-T1-E3 Vishay, SI6423DQ-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI6423DQ-T1-E3
• Description: MOSFET P-CH 12V 8.2A 8-TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6423DQ-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 9.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 8.2A
• Vgs(th) (max) @ Id: 800mV @ 400µA
• Gate Charge (qg) @ Vgs: 110nC @ 5V
• Power - Max: 1.05W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Drain Quad Source
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 8.2 A
• Power Dissipation: 1050 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9.5A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 8.5mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -400mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI6423DQ-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72257
S-80682-Rev. B, 31-Mar-08
0.030
0.024
0.018
0.012
0.006
0.000
0.1
30
10
1
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 9.5 A
0.2
On-Resistance vs. Drain Current
= 6 V
15
V
6
T
SD
J
Q
= 150 °C
- Source-to-Drain Voltage (V)
g
0.4
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
30
12
0.6
45
18
0.8
T
J
V
V
V
= 25 °C
GS
GS
GS
60
= 1.8 V
= 2.5 V
= 4.5 V
24
1.0
1.2
75
30
8000
6400
4800
3200
1600
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 9.5 A
C
2
= 4.5 V
1
rss
V
T
GS
J
0
V
C
DS
- Junction Temperature (°C)
oss
- Gate-to-Source Voltage (V)
4
- Drain-to-Source Voltage (V)
25
Capacitance
2
C
iss
I
D
50
= 9.5 A
Vishay Siliconix
6
3
75
Si6423DQ
8
www.vishay.com
100
4
10
125
150
12
5
3