ZXMN10A09KTC Diodes Zetex, ZXMN10A09KTC Datasheet - Page 2

MOSFET N-CH 100V 7.7A DPAK

ZXMN10A09KTC

Manufacturer Part Number
ZXMN10A09KTC
Description
MOSFET N-CH 100V 7.7A DPAK
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN10A09KTC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
85 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
1313pF @ 50V
Power - Max
2.15W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN10A09KTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN10A09KTC
Manufacturer:
DIODES
Quantity:
1 000
Part Number:
ZXMN10A09KTC
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
ZXMN10A09KTC
Quantity:
275 000
Thermal Characteristics
Maximum Ratings
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
measured when operating in a steady-state condition.
Characteristic
Characteristic
@T
V
V
A
GS
GS
= 25°C unless otherwise specified
= 10V
= 10V
@T
A
= 25°C unless otherwise specified
(Note 3)
T
(Note 2)
(Note 4)
(Note 3)
(Note 4)
(Note 2)
(Note 3)
(Note 6)
(Note 2)
(Note 3)
(Note 6)
(Note 5)
A
= 70°C (Note 3)
www.diodes.com
2 of 8
Symbol
Symbol
T
J
V
R
R
V
, T
I
I
P
DSS
I
DM
I
SM
θ JA
θ JL
GS
D
S
D
STG
Diodes Incorporated
A Product Line of
-55 to 150
Value
Value
4.31
34.4
10.1
80.8
2.15
17.2
12.3
1.14
100
±20
7.7
6.2
5.0
27
11
27
29
58
ZXMN10A09K
mW/°C
© Diodes Incorporated
°C/W
°C/W
Unit
Unit
°C
W
V
V
A
A
A
A
January 2010

Related parts for ZXMN10A09KTC