ZXMN10A09KTC Diodes Zetex, ZXMN10A09KTC Datasheet - Page 6

• Manufacturer Part Number: ZXMN10A09KTC
• Description: MOSFET N-CH 100V 7.7A DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A09KTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1313pF @ 50V
• Power - Max: 2.15W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN10A09KTR

Typical Characteristics - continued
Test Circuits
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
90%
10%
V
V
DS
GS
V
2000
1500
1000
G
500
Capacitance v Drain-Source Voltage
0
0.1
Q
GS
t
Basic gate charge waveform
d(on)
Switching time waveforms
V
DS
t
(on)
- Drain - Source Voltage (V)
t
r
Q
1
Q
G
C
GD
ISS
Charge
C
OSS
t
d(off)
C
10
RSS
t
(on)
t
r
V
f = 1MHz
GS
www.diodes.com
= 0V
100
6 of 8
10
8
6
4
2
0
Gate-Source Voltage v Gate Charge
Switching time test circuit
0
Gate charge test circuit
12V
R
5
G
Diodes Incorporated
Q - Charge (nC)
A Product Line of
10
V
regulator
Current
GS
50k
I
G
V
GS
15
R
Same as
D.U.T
D
D.U.T
20
V
ZXMN10A09K
DS
V
I
D
DS
= 4.6A
25
I
V
D
= 50V
© Diodes Incorporated
DS
V
January 2010
DD
30