RFD3055LE Fairchild Semiconductor, RFD3055LE Datasheet

MOSFET N-CH 60V 11A I-PAK

RFD3055LE

Manufacturer Part Number
RFD3055LE
Description
MOSFET N-CH 60V 11A I-PAK
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of RFD3055LE

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
107 mOhm @ 8A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
11.3nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
38W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.107 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
11 A
Power Dissipation
38000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.107Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±16V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RFD3055LE
Manufacturer:
FSC
Quantity:
6 725
Part Number:
RFD3055LE
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
RFD3055LE
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
RFD3055LE
Quantity:
50 000
Part Number:
RFD3055LESM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
RFD3055LESM
Quantity:
12 000
Company:
Part Number:
RFD3055LESM
Quantity:
5 000
Part Number:
RFD3055LESM9A
Manufacturer:
FSC
Quantity:
2 500
Part Number:
RFD3055LESM9A
Manufacturer:
SIPEX
Quantity:
3 562
Part Number:
RFD3055LESM9A
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2002 Fairchild Semiconductor Corporation
11A, 60V, 0.107 Ohm, Logic Level,
N-Channel Power MOSFETs
These N-Channel enhancement-mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49158.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A.
Packaging
RFD3055LE
RFD3055LESM
RFP3055LE
PART NUMBER
DRAIN (FLANGE)
TO-251AA
TO-252AA
TO-220AB
JEDEC TO-220AB
PACKAGE
Data Sheet
F3055L
F3055L
FP3055LE
SOURCE
DRAIN
BRAND
SOURCE
GATE
GATE
RFD3055LE, RFD3055LESM, RFP3055LE
JEDEC TO-252AA
DRAIN (FLANGE)
Features
• 11A, 60V
• r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Symbol
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
Components to PC Boards”
January 2002
= 0.107 Ω
DRAIN (FLANGE)
JEDEC TO-251AA
G
RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
D
S
SOURCE
®
DRAIN
Model
GATE

Related parts for RFD3055LE

RFD3055LE Summary of contents

Page 1

... RFD3055LE TO-251AA RFD3055LESM TO-252AA RFP3055LE TO-220AB NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A. Packaging JEDEC TO-220AB DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFD3055LE, RFD3055LESM, RFP3055LE Features • ...

Page 2

... L 260 MIN TYP 150 105 - 30V 8A 1.0mA g(REF) - 5.2 (Figures 20, 21) - 0.36 - 350 - 105 - MIN TYP - - RFD3055LE, RFD3055LESM, RFP3055LE Rev. B UNITS MAX UNITS - µ µ A 250 ± 100 nA Ω 0.107 170 11.3 nC 6 3.94 C C/W o 100 C/W MAX UNITS 1 ...

Page 3

... T , CASE TEMPERATURE ( C) C CASE TEMPERATURE P DM NOTES: DUTY FACTOR PEAK θJC θ FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION - PULSE WIDTH (s) FIGURE 5. PEAK CURRENT CAPABILITY RFD3055LE, RFD3055LESM, RFP3055LE Rev. B 150 175 150 ...

Page 4

... DUTY CYCLE = 0.5% MAX 120 GATE TO SOURCE VOLTAGE (V) GS VOLTAGE AND DRAIN CURRENT 2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 V 0.5 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE RFD3055LE, RFD3055LESM, RFP3055LE Rev 3. 10V 11A GS D 120 160 200 o C) ...

Page 5

... FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR DUT 0.01Ω 1 250µA D 1.1 1.0 0.9 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE V = 30V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g CONSTANT GATE CURRENT BV DSS FIGURE 17. UNCLAMPED ENERGY WAVEFORMS RFD3055LE, RFD3055LESM, RFP3055LE Rev. B 120 160 200 11A ...

Page 6

... Fairchild Semiconductor Corporation (Continued DUT DUT g(REF d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS Q g(TOT g(10) g( 10V FOR DEVICES = FOR DEVICES Q g(TH) FIGURE 21. GATE CHARGE WAVEFORMS RFD3055LE, RFD3055LESM, RFP3055LE Rev OFF d(OFF 90% 10% 90% 50 20V 10V FOR DEVICES ...

Page 7

... PSPICE Electrical Model .SUBCKT RFD3055LE rev 1/30/ 3.9e 4.9e-9 CIN 6 8 3.25e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 67.8 EDS EGS ESG EVTHRES EVTEMP LDRAIN 2 5 1.0e-9 LGATE 1 9 5.42e-9 GATE LSOURCE 3 7 2.57e-9 1 MMED MMEDMOD MSTRO MSTROMOD ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

Related keywords