RFD3055LE Fairchild Semiconductor, RFD3055LE Datasheet - Page 5

• Manufacturer Part Number: RFD3055LE
• Description: MOSFET N-CH 60V 11A I-PAK
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of RFD3055LE

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 107 mOhm @ 8A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.107 Ohm @ 5 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 11 A
• Power Dissipation: 38000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.107Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±16V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: IPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
Test Circuits and Waveforms
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
VARY t
REQUIRED PEAK I
0V
1000
100
1.2
1.0
0.8
0.6
10
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
0.1
P
-80
TO OBTAIN
V
C
t
V
GS
P
OSS
GS
JUNCTION TEMPERATURE
-40
= 0V, f = 1MHz
≅ C
V
AS
DS
T
DS
J
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
+ C
0
GD
1
R
G
40
80
V
GS
V
I
C
Unless Otherwise Specified (Continued)
= V
AS
DS
120
ISS
10
C
DS
DUT
o
RSS
= C
0.01Ω
C)
, I
L
D
GS
= C
= 250µA
160
+ C
GD
+
-
GD
V
DD
200
60
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
0
10
8
6
4
2
0
0
1.2
1.1
1.0
0.9
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
-80
V
DD
I
D
= 30V
VOLTAGE vs JUNCTION TEMPERATURE
CONSTANT GATE CURRENT
= 250µA
-40
2
T
J
I
, JUNCTION TEMPERATURE (
AS
Q
0
g
, GATE CHARGE (nC)
t
P
RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
4
40
BV
t
AV
DSS
80
WAVEFORMS IN
DESCENDING ORDER:
6
I
I
I
D
D
D
= 11A
= 5A
= 3A
120
V
o
DS
C)
8
160
V
DD
200
10