FDB8441 Fairchild Semiconductor, FDB8441 Datasheet

MOSFET N-CH 40V 80A D2PAK

FDB8441

Manufacturer Part Number
FDB8441
Description
MOSFET N-CH 40V 80A D2PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB8441

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.5 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
280nC @ 10V
Input Capacitance (ciss) @ Vds
15000pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0019 Ohms @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB8441TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB8441
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FDB8441
Quantity:
100
©2006 Fairchild Semiconductor Corporation
FDB8441 Rev.A
FDB8441
N-Channel PowerTrench
40V, 80A, 2.5mΩ
Features
Typ r
Typ Q
Low Miller Charge
Low Q
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
DS(on)
g(10)
rr
Body Diode
= 215nC at V
= 1.9mΩ at V
GS
GS
= 10V
= 10V, I
D
= 80A
®
MOSFET
1
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter / Alternator
Distributed Power Architectures and VRMs
Primary Switch for 12V Systems
www.fairchildsemi.com
August 2006

Related parts for FDB8441

FDB8441 Summary of contents

Page 1

... GS Low Miller Charge Low Q Body Diode rr UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant ©2006 Fairchild Semiconductor Corporation FDB8441 Rev.A ® MOSFET Applications Automotive Engine Control = 80A D Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter / Alternator ...

Page 2

... R Gate Resistance G Q Total Gate Charge at 10V g(TOT) Q Threshold Gate Charge g(TH) Q Gate to Source Gate Charge gs Q Gate Charge Threshold to Plateau gs2 Q Gate to Drain “Miller” Charge gd FDB8441 Rev 25°C unless otherwise noted C Parameter o < 160 10V 10V, with C/W) GS θJA ...

Page 3

... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDB8441 Rev 25°C unless otherwise noted ...

Page 4

... SINGLE PULSE 1E Figure 3. 10000 V = 10V TRANSCONDUCTANCE GS MAY LIMIT CURRENT IN THIS REGION 1000 100 SINGLE PULSE FDB8441 Rev.A 300 250 200 150 100 125 150 175 ( Figure RECTANGULAR PULSE DURATION(s) Normalized Maximum Transient Thermal Impedance - RECTANGULAR PULSE DURATION(s) Figure 4 ...

Page 5

... DUTY CYCLE = 0.5% MAX 175 GATE TO SOURCE VOLTAGE GS Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDB8441 Rev.A 500 10us If R ≠ 100 100us 10 STARTING T 1ms 10ms DC 1 0.01 100 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching 160 120 80 ...

Page 6

... T , JUNCTION TEMPERATURE J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 40000 10000 1000 f = 1MHz 100 0 DRAIN TO SOURCE VOLTAGE DS Figure 13. Capacitance vs Drain to Source Voltage FDB8441 Rev.A 1. 250 µ 1.10 1.05 1.00 0.95 0.90 -80 80 120 160 200 Figure 12. Normalized Drain to Source ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDB8441 Rev.A OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ ...

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