IRFIZ14GPBF Vishay, IRFIZ14GPBF Datasheet

MOSFET N-CH 60V 8A TO220FP

IRFIZ14GPBF

Manufacturer Part Number
IRFIZ14GPBF
Description
MOSFET N-CH 60V 8A TO220FP
Manufacturer
Vishay
Datasheet

Specifications of IRFIZ14GPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
300pF @ 25V
Power - Max
27W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8 A
Power Dissipation
27000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
8A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Fall Time
19 ns
Rise Time
50 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFIZ14GPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFIZ14GPBF
Manufacturer:
NXP
Quantity:
5 893
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90224
S10-2325-Rev. C, 11-Oct-10
TO-220 FULLPAK
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
10 A, dI/dt 90 A/µs, V
= 25 V, starting T
()
a
G
J
D
= 25 °C, L = 1.47 mH, R
S
c
DD
b
V
V
GS
DS
= 10 V
, T
G
J
N-Channel MOSFET
175 °C.
Single
3.1
5.8
60
11
g
D
S
= 25 , I
Power MOSFET
C
0.20
V
= 25 °C, unless otherwise noted)
GS
6-32 or M3 screw
AS
at 10 V
= 8.0 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRFIZ14GPbF
SiHFIZ14G-E3
IRFIZ14G
SiHFIZ14G
= 100 °C
= 25 °C
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
• Sink to Lead Creepage Distance = 4.8 mm
• 175 °C Operating Temperature
• Dynamic dv/dt Rating
• Low Thermal Resistance
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
f = 60 Hz)
SYMBOL
T
dV/dt
J
V
V
E
I
P
, T
I
DM
DS
GS
AS
D
D
stg
IRFIZ14G, SiHFIZ14G
- 55 to + 175
LIMIT
300
± 20
0.18
8.0
5.7
4.5
1.1
60
32
47
27
10
RMS
Vishay Siliconix
d
(t = 60 s;
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
COMPLIANT
V/ns
mJ
°C
W
V
A
Available
1

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IRFIZ14GPBF Summary of contents

Page 1

... This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip single screw fixing. TO-220 FULLPAK IRFIZ14GPbF SiHFIZ14G-E3 IRFIZ14G SiHFIZ14G = 25 °C, unless otherwise noted ° ...

Page 2

... IRFIZ14G, SiHFIZ14G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 90224 S10-2325-Rev. C, 11-Oct- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 175 °C C IRFIZ14G, SiHFIZ14G Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFIZ14G, SiHFIZ14G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 90224 S10-2325-Rev. C, 11-Oct-10 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 90224 S10-2325-Rev. C, 11-Oct-10 IRFIZ14G, SiHFIZ14G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms Vishay Siliconix D.U. d(off www.vishay.com 5 ...

Page 6

... IRFIZ14G, SiHFIZ14G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 90224 ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90224. Document Number: 90224 S10-2325-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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