IRFIZ14GPBF Vishay, IRFIZ14GPBF Datasheet - Page 2

• Manufacturer Part Number: IRFIZ14GPBF
• Description: MOSFET N-CH 60V 8A TO220FP
• Manufacturer: Vishay

Specifications of IRFIZ14GPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 27W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 27000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Fall Time: 19 ns
• Rise Time: 50 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFIZ14GPBF

IRFIZ14G, SiHFIZ14G
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 µs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted)
SYMBOL
SYMBOL
V
R
V
R
R
t
t
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
thJC
thJA
I
SM
t
C
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
V
R
GS
GS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 25 °C, I
DS
g
J
Reference to 25 °C, I
= 24 , R
= 25 °C, I
= 10 V
= 10 V
= 48 V, V
TYP.
V
V
V
V
f = 1.0 MHz, see fig. 5
TEST CONDITIONS
V
DS
DS
GS
DS
-
-
DD
= V
= 25 V, I
F
= 0 V, I
= 60 V, V
= 30 V, I
f = 1.0 MHz
V
V
= 10 A, di/dt = 100 A/µs
V
D
S
GS
DS
GS
GS
GS
= 2.7, see fig. 10
= 8.0 A, V
, I
I
= 25 V
= 20
= 0 V, T
D
= 0 V
D
see fig. 6 and 13
D
= 10 A, V
D
= 250 µA
D
= 250 µA
GS
= 4.8 A
I
= 10 A
D
= 0 V
D
= 4.8 A
J
GS
= 1 mA
G
G
= 150 °C
DS
= 0 V
b
= 48 V,
b
D
S
MAX.
D
S
b
5.5
b
65
b
b
MIN.
2.0
2.2
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2325-Rev. C, 11-Oct-10
Document Number: 90224
TYP.
0.63
0.20
300
160
4.5
7.5
29
12
10
50
13
19
70
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
100
UNIT
°C/W
0.20
0.40
S
250
140
4.0
3.1
5.8
8.0
1.6
25
11
32
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
nH
µC
pF
ns
ns

V
V
S
A
V