FDA20N50F Fairchild Semiconductor, FDA20N50F Datasheet - Page 2

• Manufacturer Part Number: FDA20N50F
• Description: MOSFET N-CH 500V 22A TO-3PN
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA20N50F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3390pF @ 25V
• Power - Max: 388W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.26 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 388000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA20N50F Rev. A
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 5mH, I
3: I
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
/
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
DS(on)
iss
oss
rss
SD
g(tot)
gs
gd
rr
SD
Device Marking
DSS
Symbol
∆T
DSS
≤ 22A, di/dt ≤ 200A/µs, V
FDA20N50F
J
AS
= 20A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
G
FDA20N50F
= 25Ω, Starting T
DSS
Device
Parameter
, Starting T
J
T
= 25°C
J
C
= 25°C
= 25
o
C unless otherwise noted
Package
TO-3PN
I
I
V
V
V
V
V
dI
V
V
V
V
R
V
f = 1MHz
V
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250µA, V
= 250µA, Referenced to 25
/dt = 100A/µs
= 25Ω
= 500V, V
= 400V, T
= 0V, I
= ±30V, V
= 40V, I
= 0V, I
= V
= 10V, I
= 25V, V
= 400V, I
= 10V
= 250V, I
DS
Test Conditions
, I
2
SD
SD
D
Reel Size
D
D
GS
D
GS
D
= 11A
= 22A
= 20A
GS
C
= 11A
DS
= 250µA
= 20A
= 20A
= 125
= 0V
= 0V, T
-
= 0V
= 0V
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
-
Min.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2550
Typ.
0.22
120
100
154
350
0.5
0.6
45
60
27
50
14
20
24
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
3390
0.26
100
250
210
100
465
130
1.5
5.0
10
40
65
22
88
-
-
-
-
30
-
-
-
Units
V/
nC
nC
nC
µA
pF
pF
pF
nA
ns
ns
ns
ns
ns
µC
Ω
A
A
V
V
S
V
o
C