FDA20N50F Fairchild Semiconductor, FDA20N50F Datasheet - Page 4
![MOSFET N-CH 500V 22A TO-3PN](/photos/5/47/54786/fda20n50f_sml.jpg)
FDA20N50F
Manufacturer Part Number
FDA20N50F
Description
MOSFET N-CH 500V 22A TO-3PN
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDA20N50F.pdf
(8 pages)
Specifications of FDA20N50F
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
260 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
3390pF @ 25V
Power - Max
388W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.26 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
388000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDA20N50F
Manufacturer:
ON/安森美
Quantity:
20 000
FDA20N50F Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
25
20
15
10
-100
5
0
25
-50
vs. Temperature
50
vs. Case Temperature
T
T
J
C
, Junction Temperature
, Case Temperature
0
75
1E-3
0.01
0.1
1
10
50
0.5
0.05
0.2
0.02
0.01
Single pulse
-5
0.1
100
100
[
Figure 10. Transient Thermal Response Curve
o
*Notes:
C
1. V
2. I
[
]
o
125
C
D
150
10
GS
]
= 250
-4
= 0V
µ
A
200
150
Rectangular Pulse Duration [sec]
(Continued)
10
-3
4
Figure 8. Maximum Safe Operating Area
10
200
100
0.1
10
-2
1
1
Operation in This Area
is Limited by R
*Notes:
1. Z
2. Duty Factor, D=t
3. T
P
DM
θ
JM
JC
- T
(t) = 0.44
V
10
DS
C
= P
t
, Drain-Source Voltage [V]
-1
1
t
10
DS(on)
2
DM
o
C/W Max.
* Z
*Notes:
1
1. T
2. T
3. Single Pulse
/t
θ
2
JC
(t)
C
J
= 150
= 25
10
o
0
C
o
100
C
10ms
100
1ms
DC
www.fairchildsemi.com
µ
s
30
µ
1000
s