FDP2710 Fairchild Semiconductor, FDP2710 Datasheet - Page 2
![MOSFET N-CH 250V 50A TO-220](/photos/5/47/54790/fdp2710_sml.jpg)
FDP2710
Manufacturer Part Number
FDP2710
Description
MOSFET N-CH 250V 50A TO-220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDP2710.pdf
(8 pages)
Specifications of FDP2710
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
42.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
101nC @ 10V
Input Capacitance (ciss) @ Vds
7280pF @ 25V
Power - Max
260W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.042 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
50 A
Power Dissipation
260000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDP2710
Manufacturer:
FSC
Quantity:
14 500
Part Number:
FDP2710
Manufacturer:
ON/安森美
Quantity:
20 000
FDP2710 Rev. A1
Package Marking and Ordering Information
Electrical Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
ΔBV
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
ΔT
≤ 50A, di/dt ≤ 100A/μs, V
DSS
FDP2710
J
AS
= 17A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
DD
≤ BV
Parameter
G
FDP2710
Device
= 25Ω, Starting T
DSS
, Starting T
J
= 25°C
J
T
= 25°C
C
= 25°C unless otherwise noted
Package
TO-220
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
GS
DS
GS
GS
GS
F
= 250μA, Referenced to 25°C
/dt =100A/μs
= 250V, V
= 250V, V
= V
= 10V, I
= 25V, V
= 125V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 125V, I
= 10V, R
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 50A
= 50A
= 250μA, T
GS
DS
GEN
D
D
DS
= 25A
= 25A
GS
GS
= 250μA
= 50A
= 50A
Reel Size
= 0V
= 0V,
= 0V
= 0V
= 0V,T
= 25Ω
-
J
C
= 25°C
= 125°C
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min
250
-
3.0
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Typ
5470
0.25
36.3
426
252
154
163
112
4.0
1.3
63
97
80
78
34
18
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Quantity
Max Units
7280
-100
42.5
www.fairchildsemi.com
500
100
570
146
170
515
235
320
101
150
5.0
1.2
10
50
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50
V/°C
mΩ
μA
μA
nA
nA
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V