FDP2710 Fairchild Semiconductor, FDP2710 Datasheet - Page 4
![MOSFET N-CH 250V 50A TO-220](/photos/5/47/54790/fdp2710_sml.jpg)
FDP2710
Manufacturer Part Number
FDP2710
Description
MOSFET N-CH 250V 50A TO-220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDP2710.pdf
(8 pages)
Specifications of FDP2710
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
42.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
101nC @ 10V
Input Capacitance (ciss) @ Vds
7280pF @ 25V
Power - Max
260W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.042 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
50 A
Power Dissipation
260000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDP2710
Manufacturer:
FSC
Quantity:
14 500
Part Number:
FDP2710
Manufacturer:
ON/安森美
Quantity:
20 000
FDP2710 Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
1.2
1.1
1.0
0.9
0.8
100
500
0.1
10
-100
1
1
vs. Temperature
Operation in This Area
is Limited by R
-50
T
J
* Notes :
Drain-Source Voltage, V
, Junction Temperature
1. T
2. T
3. Single Pulse
10
10
10
10
C
J
0
= 150
= 25
-1
-2
-3
0
10
DS(on)
10
-5
0.5
0.05
0.1
0.02
0.01
0.2
o
o
C
C
Single pulse
50
Figure 11. Transient Thermal Response Curve
10
100
-4
DS
* Notes :
[
1. V
2. I
100
o
[V]
100
10 ms
1ms
DC
C
D
150
]
GS
μ
= 250
s
= 0V
Rectangular Pulse Duration [sec]
10
μ
-3
A
200
400
(Continued)
10
4
-2
Figure 10. Maximum Drain Current
Figure 8. On-Resistance Variation
2.5
60
50
40
30
20
10
* Notes :
10
0
2
1
0
-100
1. Z
2. Duty Factor, D=t
3. T
25
P
-1
DM
vs. Temperature
θ
JM
vs. Case Temperature
JC
(t) = 0.48
- T
C
-50
= P
t
50
1
T
T
t
J
C
2
10
DM
, Junction Temperature [
, Case Temperature
o
C/W Max.
0
* Z
1
/t
0
θ
2
JC
75
(t)
50
10
1
100
100
[
o
C
* Notes :
]
1. V
2. I
o
125
C]
D
150
GS
= 25A
www.fairchildsemi.com
= 10V
150
200