IRFI740GLCPBF Vishay, IRFI740GLCPBF Datasheet

MOSFET N-CH 400V 5.7A TO220FP

IRFI740GLCPBF

Manufacturer Part Number
IRFI740GLCPBF
Description
MOSFET N-CH 400V 5.7A TO220FP
Manufacturer
Vishay
Datasheet

Specifications of IRFI740GLCPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.55 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5.7 A
Power Dissipation
40000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
5.7A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
550mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFI740GLCPBF
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91155
S09-0012-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
TO-220 FULLPAK
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 10 A, dI/dt ≤ 120 A/µs, V
= 50 V, starting T
(Ω)
a
G
J
= 25 °C, L = 16 mH, R
D
S
c
a
a
DD
b
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
400
39
10
19
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.55
GS
AS
6-32 or M3 screw
at 10 V
= 5.7 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRFI740GLCPbF
SiHFI740GLC-E3
IRFI740GLC
SiHFI740GLC
= 100 °C
= 25 °C
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V
• Isolated Package
• High Voltage Isolation = 2.5 kV
• Sink to Lead Creepage Distance = 4.8 mm
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing advanced Power MOSFETs technology, the device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of Power
MOSFETs offer the designer a new standard in power
transistors for switching applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware. The moulding compound used provides
a high isolation capability and low thermal resistance
between the tab and external heatsink.
f = 60 Hz)
IRFI740GLC, SiHFI740GLC
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
GS
Rating
- 55 to + 150
LIMIT
300
± 30
0.32
400
310
5.7
3.6
5.7
4.0
4.0
1.1
23
40
10
RMS
d
Vishay Siliconix
(t = 60 s,
www.vishay.com
lbf · in
RoHS*
COMPLIANT
UNIT
W/°C
N · m
V/ns
mJ
mJ
°C
W
V
A
A
Available
1

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IRFI740GLCPBF Summary of contents

Page 1

... N-Channel MOSFET The TO-220 Fullpak eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and low thermal resistance between the tab and external heatsink. TO-220 FULLPAK IRFI740GLCPbF SiHFI740GLC-E3 IRFI740GLC SiHFI740GLC = 25 °C, unless otherwise noted ° ...

Page 2

... IRFI740GLC, SiHFI740GLC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91155 S09-0012-Rev. A, 19-Jan-09 IRFI740GLC, SiHFI740GLC = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFI740GLC, SiHFI740GLC Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91155 S09-0012-Rev. A, 19-Jan-09 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91155 S09-0012-Rev. A, 19-Jan-09 IRFI740GLC, SiHFI740GLC Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms Vishay Siliconix D.U. d(off www.vishay.com 5 ...

Page 6

... IRFI740GLC, SiHFI740GLC Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91155 S09-0012-Rev ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91155. Document Number: 91155 S09-0012-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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