IRFP23N50LPBF Vishay, IRFP23N50LPBF Datasheet - Page 2

• Manufacturer Part Number: IRFP23N50LPBF
• Description: MOSFET N-CH 500V 23A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP23N50LPBF

• Transistor Polarity: N-Channel
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 235mohm
• Rds(on) Test Voltage Vgs: 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.235 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 370000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Voltage Vgs Max: 30V
• Operating Temperature: RoHS Compliant
• Leaded Process Compatible: Yes
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP23N50LPBF


‚
ƒ
V
∆V
R
V
I
I
R
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
C
E
I
E
R
R
R
Static @ T
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
DSS
GSS
d(on)
r
d(off)
f
AR
2
(BR)DSS
DS(on)
GS(th)
G
iss
oss
rss
oss
oss
oss
oss
AS
AR
θJC
θCS
θJA
g
gs
gd
Repetitive rating; pulse width limited by
I
max. junction temperature. (See Fig. 11).
T
(BR)DSS
Starting T
SD
I
Symbol
Symbol
Symbol
Symbol
AS
J
eff.
eff. (ER)
≤ 150°C.
≤ 23A, di/dt ≤ 650A/µs, V
= 23A, dv/dt = 21V/ns. (See Figure 12).
/∆T
J
J
= 25°C, L = 1.5mH, R
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
DD
≤ V
Ù
G
(BR)DSS
= 25Ω,
,
™
„
…
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
C
as C
as C
oss
oss
Min. Typ. Max. Units
Min. Typ. Max. Units
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
12
oss
eff. is a fixed capacitance that gives the same charging time
oss
eff.(ER) is a fixed capacitance that stores the same energy
while V
while V
0.190 0.235
3600
4800
0.27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
380
100
220
160
1.2
26
94
53
45
37
DS
DS
Typ.
Typ.
-100
0.24
is rising from 0 to 80% V
–––
–––
100
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.0
2.0
is rising from 0 to 80% V
50
44
72
V/°C
mA
µA
nA
nC
pF
ns
Ω
Ω
V
V
S
V
V
V
V
Reference to 25°C, I
V
V
V
V
V
f = 1MHz, open drain
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig. 5
V
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 23A
= 23A
= 6.0Ω
= 0V, I
= 10V, I
= V
= 500V, V
= 400V, V
= 30V
= -30V
= 50V, I
= 400V
= 10V, See Fig. 7 & 15
= 250V
= 10V, See Fig. 11a & 11b
= 0V
= 25V
= 0V, V
= 0V, V
= 0V,V
GS
Max.
Max.
0.34
410
–––
, I
23
37
40
DSS
Conditions
D
Conditions
DS
D
DS
DS
DSS
D
D
= 250µA
= 250µA
= 14A
= 14A
= 0V to 400V
GS
GS
.
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
.
= 0V
= 0V, T
www.irf.com
D
f
= 1mA
J
= 125°C
Units
Units
°C/W
f
g
mJ
mJ
A
f