IRFP23N50LPBF Vishay, IRFP23N50LPBF Datasheet - Page 5

MOSFET N-CH 500V 23A TO-247AC

IRFP23N50LPBF

Manufacturer Part Number
IRFP23N50LPBF
Description
MOSFET N-CH 500V 23A TO-247AC
Manufacturer
Vishay
Datasheets

Specifications of IRFP23N50LPBF

Transistor Polarity
N-Channel
Continuous Drain Current Id
23A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
235mohm
Rds(on) Test Voltage Vgs
10V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
235 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
370W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.235 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
23 A
Power Dissipation
370000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Voltage Vgs Max
30V
Operating Temperature
RoHS Compliant
Leaded Process Compatible
Yes
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP23N50LPBF

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1000
100
Fig 9. Maximum Safe Operating Area
10
1
Fig 11a. Switching Time Test Circuit
10
T
T
Single Pulse
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
V
DS
°
°
, Drain-to-Source Voltage (V)
100
BY R
≤ 0.1 %
≤ 1
DS(on)
10us
100us
1ms
10ms
1000
10000
+
-
25
20
15
10
Fig 11b. Switching Time Waveforms
5
0
Fig 10. Maximum Drain Current vs.
25
V
90%
10%
V
DS
GS
t
50
T , Case Temperature
d(on)
Case Temperature
C
t
r
75
100
t
d(off)
( C)
°
125
t
f
5
150

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