2N7002E,215 NXP Semiconductors, 2N7002E,215 Datasheet - Page 5

• Manufacturer Part Number: 2N7002E,215
• Description: MOSFET N-CH 60V 385MA SOT23
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of 2N7002E,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 385mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.69nC @ 10V
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.385 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 2N7002E T/R; 2N7002E T/R; 2N7002E,215; 568-4858-2; 934056996215

Philips Semiconductors
6. Characteristics
Table 5:
T
2N7002E_3
Product data sheet
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
Source-drain diode
V
t
Q
DSS
GSS
on
off
rr
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
= 25 C unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
source-drain voltage
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
V
V
I
see
V
see
V
R
I
I
D
D
D
S
S
DS
GS
GS
GS
GS
DS
G
T
T
T
T
T
T
T
T
T
= 300 mA; V
= 300 mA; dI
= 10 A; V
= 0.25 mA; V
= 300 mA; V
j
j
j
j
j
j
j
j
j
= 50 ; R
Figure 11
Figure 14
= 48 V; V
= 50 V; R
= 15 V; V
= 10 V; I
= 4.5 V; I
= 0 V; V
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
Rev. 03 — 28 April 2006
DS
D
GS
GS
D
GS
L
and
= 500 mA; see
GS
DS
DS
S
= 75 mA; see
= 250 ; V
DS
= 10 V; f = 1 MHz;
= 0 V
= 50
/dt = 100 A/ s; V
= 0 V
= 30 V; V
= 0 V; see
= 0 V
= V
12
GS
; see
GS
GS
Figure 13
Figure 6
= 10 V;
Figure 9
Figure 6
= 10 V;
GS
= 0 V
and
and
and
8
10
8
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
N-channel TrenchMOS FET
Min
60
55
1
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
2
-
-
-
-
10
0.78
1.45
1.2
0.69
0.1
0.27
31
6.8
3.5
2.5
11
0.85
30
30
2N7002E
Max
-
-
2.5
-
2.75
1
10
100
3
5.5
4
-
-
-
50
30
10
10
15
1.5
-
-
5 of 12
Unit
V
V
V
V
V
nA
nC
nC
nC
pF
pF
pF
ns
ns
V
ns
nC
A
A