BSS123,215 NXP Semiconductors, BSS123,215 Datasheet - Page 2

• Manufacturer Part Number: BSS123,215
• Description: MOSFET N-CH 100V 150MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of BSS123,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 120mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 25V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.15 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 6Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4873-2; 933946340215; BSS123 T/R; BSS123 T/R; BSS123,215

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
August 2000
N-channel TrenchMOS
Logic level FET
SYMBOL PARAMETER
V
V
R
g
I
I
t
t
C
C
C
j
= 25˚C unless otherwise specified
DSS
GSS
on
off
fs
(BR)DSS
GS(TO)
DS(ON)
iss
oss
rss
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Zero gate voltage drain
current
Gate source leakage current V
Turn-on time
Turn-off time
Input capacitance
Output capacitance
Feedback capacitance
transistor
CONDITIONS
V
V
V
V
V
V
R
V
GS
DS
GS
DS
DS
GS
DD
GS
G
= 50 ; Resistive load
= 0 V; I
= V
= 10 V; I
= 25 V; I
= 60 V; V
= 20 V; V
= 50 V; R
= 0 V; V
GS
; I
D
D
DS
D
D
= 10 A
= 1 mA
GS
D
= 120 mA
= 120 mA
DS
2
= 25 V; f = 1 MHz
= 250 ; V
= 0 V
= 0 V
GS
= 10 V;
MIN.
100
1
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
Product specification
130
350
3.5
10
10
12
23
2
3
6
4
100
100
2.8
10
20
40
25
10
BSS123
6
-
-
Rev 1.000
mS
nA
nA
pF
pF
pF
ns
ns
V
V