BSS84,215 NXP Semiconductors, BSS84,215 Datasheet - Page 5

• Manufacturer Part Number: BSS84,215
• Description: MOSFET P-CH 50V 130MA SOT-23
• Manufacturer: NXP Semiconductors
• Type: Small Signalr

Specifications of BSS84,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 130mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 130mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 45pF @ 25V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.13 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 10Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1660-2; 933946360215; BSS84 T/R; BSS84T/R

NXP Semiconductors
7. Characteristics
BSS84_6
Product data sheet
Table 7.
T
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
Y
DSS
GSS
on
off
j
(BR)DSS
GS(th)
DSon
iss
oss
rss
= 25 C unless otherwise specified.
fs
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transfer admittance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on time
turn-off time
Rev. 06 — 16 December 2008
P-channel enhancement mode vertical DMOS transistor
Conditions
I
I
see
V
V
V
V
V
I
see
V
I
V
f = 1 MHz; see
V
to 10 V; I
see
V
V
I
see
D
D
D
D
D
DS
DS
GS
GS
GS
DS
GS
DS
DS
GS
T
T
T
T
T
= 10 A; V
= 1 mA; V
= 130 mA;
= 130 mA
= 200 mA;
j
j
j
j
j
Figure 8
Figure 5
Figure 10
Figure 10
= 40 V; V
= 50 V; V
= 25 V;
= 40 V; V
= 40 V;
= 25 C
= 55 C
= 25 C
= 25 C
= 125 C
= +20 V; V
= 20 V; V
= 10 V;
= 0 V; V
= 10 V to 0 V;
D
= 200 mA;
DS
and
DS
GS
and
and
GS
GS
GS
DS
DS
Figure 9
= 25 V;
= V
= 0 V
7
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
11
11
GS
;
Min
-
-
-
-
-
-
-
50
-
-
-
-
-
50
0.8
Typ
-
-
-
-
-
-
-
-
6
-
25
15
3.5
3
7
© NXP B.V. 2008. All rights reserved.
BSS84
Max
-
100
100
10
-
45
25
12
-
-
2
1.8
100
10
60
Unit
V
V
V
nA
nA
nA
mS
pF
pF
pF
ns
ns
5 of 11
A
A