BSH111,235 NXP Semiconductors, BSH111,235 Datasheet - Page 3

• Manufacturer Part Number: BSH111,235
• Description: MOSFET N-CH 55V 0.335A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH111,235

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 335mA
• Vgs(th) (max) @ Id: 1.3V @ 1mA
• Gate Charge (qg) @ Vgs: 1nC @ 8V
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056036235; BSH111 /T3; BSH111 /T3

Philips Semiconductors
9397 750 09629
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
P der
sp
der
(%)
120
I D
(A)
80
40
function of solder point temperature.
10 -1
10 -2
= 25 C; I
0
=
10
1
0
----------------------
P
1
tot 25 C
P
tot
DM
is single pulse.
50
100%
100
Limit R DSon = V DS / I D
150
T sp ( C)
03aa17
200
Rev. 02 — 26 April 2002
N-channel enhancement mode field-effect transistor
Fig 2. Normalized continuous drain current as a
10
DC
V
I
I der
(%)
der
GS
120
80
40
function of solder point temperature.
0
=
0
4.5 V
------------------ -
I
D 25 C
I
D
50
100%
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
100
V DS (V)
150
100 s
t p = 10 s
1 ms
10 ms
100 ms
BSH111
T sp ( C)
03aa25
03aa71
200
10 2
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