BSH112,235 NXP Semiconductors, BSH112,235 Datasheet - Page 7

• Manufacturer Part Number: BSH112,235
• Description: MOSFET N-CH 60V 300MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH112,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1768-2; 934056035235; BSH112 /T3

Philips Semiconductors
9397 750 07305
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C and 150 C; V
= 1 mA; V
V GS(th)
junction temperature.
drain current; typical values.
g fs
(S)
(V)
0.25
0.15
0.05
0.3
0.2
0.1
2.5
1.5
0.5
0
3
2
1
0
-60
0
DS
V DS > I D X R DSon
= V
-20
0.1
GS
DS
20
0.2
min
typ
I
D
60
0.3
R
DSon
100
T j = 25 o C
0.4
150 o C
T j ( o C)
140
I D (A)
03aa44
03aa34
0.5
Rev. 01 — 25 August 2000
180
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
C iss , C oss ,
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
C rss (pF)
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
(A)
I
D
10 2
10
0
1
10 -1
DS
= 5 V
0.5
1
min
1
1.5
© Philips Electronics N.V. 2000. All rights reserved.
2
10
typ
V GS (V)
2.5
V DS (V)
BSH112
03aa37
C oss
C iss
03aa46
C rss
3
10 2
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