2SK3541T2L Rohm Semiconductor, 2SK3541T2L Datasheet - Page 2
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2SK3541T2L
Manufacturer Part Number
2SK3541T2L
Description
MOSFET N-CH 30V .1A VMT3
Manufacturer
Rohm Semiconductor
Datasheet
1.2SK3541T2L.pdf
(4 pages)
Specifications of 2SK3541T2L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 10mA, 4V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
1.5V @ 100µA
Input Capacitance (ciss) @ Vds
13pF @ 5V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
VMT3
Transistor Polarity
N Channel
Continuous Drain Current Id
10mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
8ohm
Rds(on) Test Voltage Vgs
4V
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Configuration
Single
Resistance Drain-source Rds (on)
8 Ohm @ 4 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.1 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Threshold Voltage Vgs Typ
1.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SK3541T2L
2SK3541T2LTR
2SK3541T2LTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3541T2L
Manufacturer:
EPCOS
Quantity:
3 001
Company:
Part Number:
2SK3541T2L
Manufacturer:
ROHM
Quantity:
754
Part Number:
2SK3541T2L
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistor
Static drain-source on-state
resistance
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristics (Ta=25°C)
Electrical characteristic curves
Fig.1 Typical output characteristics
0.15
0.05
0.1
Fig.4 Static drain-source on-state
0
0
0.5
50
20
10
5
2
1
0.001
DRAIN-SOURCE VOLTAGE : V
0.002
resistance vs. drain current (Ι)
Parameter
1
Ta=125°C
4V
3.5V
DRAIN CURRENT : I
0.005
−25°C
75°C
25°C
V
2
0.01 0.02
GS
2.5V
2V
= 1.5V
3V
3
0.05
D
0.1
4
Ta=25°C
Pulsed
(A)
DS
V
Pulsed
(V)
GS
V
0.2
Symbol
R
R
V
(BR)DSS
=4V
t
t
I
I
|Y
C
C
DS(on)
DS(on)
C
GS(th)
d(on)
d(off)
GSS
DSS
5
t
t
oss
iss
rss
r
f
fs
0.5
|
Fig.2 Typical transfer characteristics
200m
100m
0.5m
0.2m
0.1m
Min.
50m
20m
10m
Fig.5 Static drain-source on-state
0.8
30
20
5m
2m
1m
−
−
−
−
−
−
−
−
−
−
−
0.5
50
20
10
0
5
2
1
0.001
V
Pulsed
DS
GATE-SOURCE VOLTAGE : V
0.002
resistance vs. drain current (ΙΙ)
=3V
Typ.
13
15
35
80
80
Ta=125°C
−
−
−
−
5
7
−
9
4
1
DRAIN CURRENT : I
0.005 0.01 0.02
−25°C
75°C
25°C
Max.
1.0
1.5
±1
13
−
8
−
−
−
−
−
−
−
−
2
Ta=125°C
−25°C
75°C
25°C
0.05
Unit
mS
µA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
V
V
D
3
0.1
(A)
GS
V
Pulsed
GS
(V)
0.2
V
I
V
V
I
I
I
V
V
f=1MHz
I
V
R
R
=2.5V
D
D
D
D
D
GS
DS
DS
DS
GS
GS
L
G
=10µA, V
=10mA, V
=1mA, V
=10mA, V
=10mA, V
=500Ω
=10Ω
=±20V, V
=30V, V
=3V, I
=5V
=0V
=5V
4
0.5
D
GS
=100µA
GS
1.5
0.5
GS
GS
DS
DD
15
10
Conditions
=2.5V
2
0
0
1
−50
5
DS
=0V
Fig.3 Gate threshold voltage vs.
0
=3V
=0V
=4V
=0V
Fig.6 Static drain-source
CHANNEL TEMPERATURE : Tch (°C)
5V
GATE-SOURCE VOLTAGE : V
−25
channel temperature
0
5
on-state resistance vs.
gate-source voltage
25
Rev.B
10
50
2SK3541
I
I
D
D
=0.1A
=0.05A
75
100 125 150
15
V
I
Pulsed
D
Ta=25°C
Pulsed
GS
DS
=0.1mA
=3V
(V)
2/3
20