RK7002AT116 Rohm Semiconductor, RK7002AT116 Datasheet
RK7002AT116
Specifications of RK7002AT116
RK7002AT116TR
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RK7002AT116 Summary of contents
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Transistors Switching (60V, 300mA) RK7002A !Features 1) Low on-resistance. 2) High ESD 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel Structure Silicon N-channel MOSFET transistor ! ...
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Transistors ! ! ! ! Electrical characteristics (Ta=25°C) Parameter Symbol Gate leakage current I GSS Drain-source breakdown voltage V (BR) DSS Drain cutoff current I DSS Gate threshold voltage V GS (th) Drain-source on-state resistance R DS (on) Forward transfer ...
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Transistors 10 = 10V V GS Pulsed Ta=125°C 75°C 25°C −25°C 1.0 0.1 0.01 0.1 (A) DRAIN CURRENT : I D Fig.4 Static drain-source on-state resistance vs. drain current ( Ι ) 2.0 =10V V GS Pulsed 1.5 1.0 =300mA ...
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Transistors ! ! ! ! Switching characteristics measurement circuit D.U. Fig.13 Switching time measurement circuit Pulse width 50 10 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...