PMF400UN,115 NXP Semiconductors, PMF400UN,115 Datasheet - Page 9
![MOSFET N-CH 30V 830MA SOT-323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
PMF400UN,115
Manufacturer Part Number
PMF400UN,115
Description
MOSFET N-CH 30V 830MA SOT-323
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PMF400UN115.pdf
(12 pages)
Specifications of PMF400UN,115
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
480 mOhm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
830mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
0.89nC @ 4.5V
Input Capacitance (ciss) @ Vds
43pF @ 25V
Power - Max
560mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-3244-2
934057723115
PMF400UN T/R
PMF400UN T/R
934057723115
PMF400UN T/R
PMF400UN T/R
Philips Semiconductors
7. Package outline
Fig 14. SOT323 (SC-70).
9397 750 12765
Product data
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
JEDEC
1.35
1.15
E
0
2
REFERENCES
Rev. 01 — 11 February 2004
1.3
e
w
B
M
0.65
B
e 1
SC-70
scale
EIAJ
1
2.2
2.0
H E
A
0.45
0.15
L p
N-channel TrenchMOS™ ultra low level FET
A 1
2 mm
0.23
0.13
Q
H E
0.2
E
v
detail X
0.2
PROJECTION
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
w
EUROPEAN
L p
A
PMF400UN
Q
c
X
v
ISSUE DATE
M
97-02-28
A
SOT323
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