Transistors 2.5V Drive Nch+SBD MOS FET QS5U12 Structure Silicon N-channel MOSFET Schottky Barrier DIODE Features 1) The QS5U12 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low ...
Transistors Absolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Continuous Source current (Body diode) Pulsed Channel temperature Power dissipation <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature ...
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