RSS090N03TB Rohm Semiconductor, RSS090N03TB Datasheet

MOSFET N-CH 30V 9A 8-SOIC

RSS090N03TB

Manufacturer Part Number
RSS090N03TB
Description
MOSFET N-CH 30V 9A 8-SOIC
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RSS090N03TB

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
810pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RSS090N03TB
RSS090N03TBTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RSS090N03TB
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Switching (30V, 9A)
RSS090N03
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
Power switching, DC/DC converter.
Silicon N-channel
MOS FET
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Source Current
(Body Diode)
Total Power Dissipation
Channel Temperature
Storage Temperature
Channel to Ambient
1 Pw 10 s, Duty cycle 1%
2 Mounted on a ceramic board.
Mounted on a ceramic board.
Features
Application
Structure
Absolute maximum ratings (Ta = 25°C)
Thermal resistance (Ta = 25°C)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
V
Tstg
Tch
I
P
I
GSS
I
DSS
DP
I
Rth (ch-a)
sp
D
s
D
Symbol
55 to 150
Limits
150
20
1.6
6.4
30
9.0
36
2
Limits
62.5
Unit
W
V
V
A
A
A
A
C
C
External dimensions (Unit : mm)
SOP8
C / W
1
1
2
Unit
1.27
5.0 0.2
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
Equivalent circuit
1 ESD Protection Diode.
2 Body Diode.
(1)
(8)
2
0.1
0.4 0.1
Each lead has same dimensions
(2)
(7)
(3)
(6)
RSS090N03
0.2 0.1
1
(4)
(5)
(8) (7) (6) (5)
(1) (2) (3) (4)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
1/3

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RSS090N03TB Summary of contents

Page 1

Transistors Switching (30V, 9A) RSS090N03 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Application Power switching, DC/DC converter. Structure Silicon N-channel MOS FET Absolute maximum ratings (Ta = 25°C) Parameter Symbol Drain-Source ...

Page 2

Transistors Electrical characteristics (Ta = 25°C) Parameter Symbol Gate-Source Leakage I Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I Gate Threshold Voltage V Static Drain-Source On-State R Resistance Forward Transfer Admittance l Y Input Capacitance C Output ...

Page 3

Transistors Electrical characteristic curves 10000 1MHz iss 1000 C oss C rss 100 10 0.01 0 100 (V) DRAIN-SOURCE VOLTAGE : V DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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