BSP89,115 NXP Semiconductors, BSP89,115 Datasheet - Page 3

• Manufacturer Part Number: BSP89,115
• Description: MOSFET N-CH 240V 375MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP89,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 340mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 375mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 120pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.375 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1769-2; 934018750115; BSP89 T/R

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum
CHARACTERISTICS
T
2001 May 18
R
V
I
I
V
R
C
C
C
Switching times (see Figs 3 and 4)
t
t
j
DSS
GSS
on
off
SYMBOL
SYMBOL
(BR)DSS
GSth
Y
th j-a
= 25 C unless otherwise specified.
DSon
iss
oss
rss
N-channel enhancement mode
vertical D-MOS transistor
fs
6 cm
2
.
thermal resistance from junction to ambient; note 1
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-state resistance
transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
PARAMETER
PARAMETER
I
V
V
I
I
I
I
V
V
V
I
V
I
V
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
GS
GS
= 10 A; V
= 1 mA; V
= 340 mA; V
= 340 mA; V
= 340 mA; V
= 250 mA; V
= 250 mA; V
= 60 V; V
= 25 V; V
= 25 V; V
= 25 V; V
= 20 V; V
= 0 to 10 V
= 0 to 10 V
3
CONDITIONS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DD
DD
DS
= V
= 0
= 0
= 0; f = 1 MHz
= 0; f = 1 MHz
= 0; f = 1 MHz
= 25 V
= 0
= 10 V
= 4.5 V
= 50 V;
= 50 V;
DS
0.8
140
240
MIN.
VALUE
83.3
2.8
600
100
20
10
6
47
TYP.
Product specification
200
100
2
5
7.5
120
30
15
10
60
MAX.
BSP89
UNIT
K/W
V
nA
nA
V
mS
pF
pF
pF
ns
ns
UNIT