BUK92150-55A,118 NXP Semiconductors, BUK92150-55A,118 Datasheet

MOSFET N-CH 55V 11A DPAK

BUK92150-55A,118

Manufacturer Part Number
BUK92150-55A,118
Description
MOSFET N-CH 55V 11A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK92150-55A,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
6nC @ 5V
Input Capacitance (ciss) @ Vds
338pF @ 25V
Power - Max
36W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
11 A
Power Dissipation
3600 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4281-2
934056250118
BUK92150-55A /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
Static characteristics
R
I
D
DS
tot
DSon
BUK92150-55A
N-channel TrenchMOS logic level FET
Rev. 05 — 24 March 2011
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
V
T
see
V
T
V
see
j
mb
j
j
GS
GS
GS
GS
GS
≥ 25 °C; T
= 175 °C; see
= 25 °C
Figure
Figure 12
Figure
= 25 °C; see
= 5 V; T
= 10 V; I
= 5 V; I
= 4.5 V; I
= 5 V; I
3; see
11; see
D
D
mb
j
D
≤ 175 °C
= 5 A;
= 5 A; T
D
= 5 A; T
= 25 °C;
= 5 A;
Figure
Figure 2
Figure 1
Figure 12
j
= 25 °C;
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
j
= 25 °C
11;
Min
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
97
-
-
120
Max Unit
55
11
36
125
280
155
140
V
A
W
mΩ
mΩ
mΩ
mΩ

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BUK92150-55A,118 Summary of contents

Page 1

... BUK92150-55A N-channel TrenchMOS logic level FET Rev. 05 — 24 March 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... see Figure 13 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK92150-55A N-channel TrenchMOS logic level FET Min ≤ sup = °C; j Graphic symbol G mbb076 ...

Page 3

... GS j(init) 03nf49 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK92150-55A N-channel TrenchMOS logic level FET Min - - -15 Figure 3; - Figure -55 - ° Ω ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK92150-55A Product data sheet Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK92150-55A N-channel TrenchMOS logic level FET 03nf47 = 10 μ 100 μ 100 ...

Page 5

... Transient thermal impedance from junction to ambient as a function of pulse duration BUK92150-55A Product data sheet Conditions see Figure 4 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK92150-55A N-channel TrenchMOS logic level FET Min Typ - - - 71.4 03nf48 t p δ ...

Page 6

... ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK92150-55A N-channel TrenchMOS logic level FET Min Typ Max 2.3 1 1 500 - 0. 100 ...

Page 7

... V (V) DS Fig 6. 03aa36 max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK92150-55A N-channel TrenchMOS logic level FET 140 DSon 120 100 Drain-source on-state resistance as a function of gate-source voltage; typical values ( ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03nf45 3.6 3 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK92150-55A N-channel TrenchMOS logic level FET 2.5 V GS(th) (V) 2 max 1.5 typ min 1 0.5 0 -60 0 ...

Page 9

... Fig 14. Input, output and reverse transfer capacitances ( 175 ° ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK92150-55A N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nf39 1.5 2 ...

Page 10

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK92150-55A N-channel TrenchMOS logic level FET min 10.4 2.95 0.5 2.285 4.57 9 ...

Page 11

... Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK92150-55A N-channel TrenchMOS logic level FET Supersedes BUK92150-55A v.4 BUK92150-55A v.3 © NXP B.V. 2011. All rights reserved ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK92150-55A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK92150-55A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 24 March 2011 Document identifier: BUK92150-55A ...

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