2SK2504TL Rohm Semiconductor, 2SK2504TL Datasheet - Page 3
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2SK2504TL
Manufacturer Part Number
2SK2504TL
Description
MOSFET N-CH 100V 5A DPAK
Manufacturer
Rohm Semiconductor
Datasheet
1.2SK2504TL.pdf
(6 pages)
Specifications of 2SK2504TL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
220 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Input Capacitance (ciss) @ Vds
520pF @ 10V
Power - Max
20W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.22 Ohm @ 4 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5 A
Power Dissipation
20000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SK2504TL
2SK2504TLTR
2SK2504TLTR
Transistors
Fig.7 Static Drain-Source On-State Resistance
Electrical characteristics curve
0.5
0.1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50
10
5
1
0
−50
0.6
0.4
0.2
Fig.1 Maximum Safe Operating Area
1
vs. Gate-Source Voltage
0
Tc = 25°C
Single pulse
0
Fig.4 Gate Threshold Voltage
CHANNEL TEMPERATURE : T ch
−25
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
vs. Channel Temperature
0
5
5
25
10
50
l
D
10
=5A
75
2.5A
100 125
50
V
15
l
D
DS
=1mA
Ta=25°C
DS
Pulsed
100
GS
= 10V
(
°C
(V)
(V)
)
200
150
20
Fig.5 Static Drain-Source On-State Resistance
Fig.8 Static Drain-Source On-State Resistance
0.01
0.1
10
10
0.01
vs. Drain Current ( Ι )
1
0.6
0.5
0.4
0.3
0.2
0.1
9
8
7
6
5
4
3
2
1
0
Fig.2 Typical Output Characteristics
0
0
−50
V
Pulsed
vs. Channel Temperature
GS
DRAIN-SOURCE VOLTAGE : V
= 10V
CHANNEL TEMPERATURE : Tch
−25
10V
8V
6V
5V
1
Ta=125°C
DRAIN CURRENT : I
0
−25°C
0.1
75°C
25°C
I
D
=5A
2
25
50
2.5A
3
75
1
D
V
(A)
100 125 150
GS
Pulsed
Ta = 25°C
4
=3V
V
4V
DS
Pulsed
GS
(V)
= 10V
(°C)
10
5
Fig.6 Static Drain-Source On-State Resistance
0.05
0.01
0.01
0.05
0.02
0.01
0.5
0.2
0.1
0.5
0.2
0.1
100
10
10
0.5
0.2
0.1
0.01
50
20
10
Fig.3 Typical Transfer Characteristics
5
2
1
5
2
1
vs. Drain Current ( ΙΙ )
5
2
1
0.01 0.02 0.05
0
V
Pulsed
Fig.9 Forward Transfer Admittance
V
Pulsed
V
Pulsed
GS
DS
0.02
DS
GATE-SOURCE VOLTAGE : V
= 4V
= 10V
= 10V
1
Ta=125°C
0.05 0.1
vs. Drain Current
Ta=125°C
DRAIN CURRENT : I
DRAIN CURRENT : I
Ta= −25°C
−25°C
−25°C
75°C
25°C
75°C
25°C
2
0.1 0.2
125°C
25°C
75°C
Rev.A
0.2
3
0.5
0.5
2SK2504
1.0 2.0
4
1
D
D
(A)
2.0
(A)
GS
5
(V)
5.0 10
5.0 10
3/5
6