RSD200N10TL Rohm Semiconductor, RSD200N10TL Datasheet - Page 5

• Manufacturer Part Number: RSD200N10TL
• Description: MOSFET N-CH 100V 20A CPT3
• Manufacturer: Rohm Semiconductor

Specifications of RSD200N10TL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 48.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 20 A
• Power Dissipation: 20 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RSD200N10TLTR

RSD200N10
Transistors
Switching characteristics measurement circuit
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
Fig.2-1 Gate charge measurement circuit
Fig.2-2 Gate charge waveform
Fig.3-1 Avalanche measurement circuit
Fig.3-2 Avalanche waveform
Rev.A
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