PSMN1R5-25YL,115 NXP Semiconductors, PSMN1R5-25YL,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN1R5-25YL,115
• Description: MOSFET N-CH 25V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN1R5-25YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 4830pF @ 12V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4907-2; 934063451115

NXP Semiconductors
PSMN1R5-25YL_1
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
R
(mΩ)
(A)
I
10
10
10
10
DSon
D
12
10
−3
−4
−5
−6
8
6
4
2
0
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
0
2
0.5
4
1
min
6
1.5
typ
8
2
V
003aac908
003aab271
max
V
GS
GS
(V)
(V)
2.5
10
Rev. 01 — 16 June 2009
Fig 10. Input and reverse transfer capacitances as a
Fig 12. Gate-source threshold voltage as a function of
(pF)
V
8000
6000
4000
2000
C
GS (th)
(V)
0
3
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
2
C
C
iss
rss
N-channel TrenchMOS logic level FET
4
0
PSMN1R5-25YL
max
typ
min
60
6
120
8
© NXP B.V. 2009. All rights reserved.
V
003aac907
003a a c337
T
GS
j
(°C)
(V)
180
10
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