PSMN012-80PS,127 NXP Semiconductors, PSMN012-80PS,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN012-80PS,127
• Description: MOSFET N-CH 80V 74A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-80PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 74A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 2782pF @ 12V
• Power - Max: 148W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 74 A
• Power Dissipation: 148 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4902-5; 934063911127

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN012-80PS_2
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10
10
10
10
(A)
10
I
-1
-1
-2
-3
-4
D
3
2
1
1
10
values
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
1
-6
δ = 0.5
0.2
0.05
0.1
0.02
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
Limit R
single shot
DSon
= V
DS
10
/ I
-5
D
Conditions
see
Figure 4
10
10
-4
Rev. 02 — 25 June 2009
DC
10
-3
N-channel 80 V 11 mΩ standard level MOSFET
10
10
-2
2
100 μs
1 ms
10 ms
100 ms
10 μs
PSMN012-80PS
Min
-
V
10
P
DS
-1
(V)
Typ
0.65
t
p
T
t
© NXP B.V. 2009. All rights reserved.
p
(s)
003aad300
003aad007
δ =
Max
1
T
t
p
t
10
1
3
Unit
K/W
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