Transistors 10V Drive Nch MOS FET RDX120N50 Structure Silicon N-channel MOS FET Features 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. Applications Switching Packaging specifications Package Bulk Type Code Basic ordering unit (pieces) ...
Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance Y ...
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