APT13F120B Microsemi Power Products Group, APT13F120B Datasheet - Page 2

• Manufacturer Part Number: APT13F120B
• Description: MOSFET N-CH 1200V 13A TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT13F120B

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 7A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 145nC @ 10V
• Input Capacitance (ciss) @ Vds: 4765pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT13F120BMI; APT13F120BMI

Dynamic Characteristics
Source-Drain Diode Characteristics
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 C
5 C
6 R
∆V
∆V
Symbol
Symbol
Symbol
V
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
V
BR(DSS)
C
R
C
V
GS(th)
DS
o(cr)
o(er)
G
BR(DSS)
dv/dt
t
t
I
I
C
C
C
o(er)
V
DS(on)
GS(th)
o(cr)
Q
Q
d(on)
d(off)
I
I
DSS
GSS
Q
Q
g
I
SM
t
rrm
is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
t
t
oss
SD
iss
rss
S
rr
less than V
fs
gd
gs
r
f
rr
g
is defined as a fixed capacitance with the same stored charge as C
is defined as a fixed capacitance with the same stored energy as C
/∆T
4
5
/∆T
J
J
J
= 25°C, L = 43.59mH, R
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Parameter
Continuous Source Current
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
(Body Diode)
(BR)DSS,
use this equation: C
1
G
= 25Ω, I
3
o(er)
= -2.17E-7/V
AS
= 7A.
T
J
J
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
= 25°C unless otherwise specified
SD
di
DS
≤ 7A, di/dt ≤1000A/µs, V
SD
I
V
^2 + 2.63E-8/V
SD
I
/
SD
DD
dt = 100A/µs
= 7A
= 7A
= 100V
V
Reference to 25°C, I
Test Conditions
V
V
DS
GS
GS
R
V
V
G
3
V
GS
,
Test Conditions
V
Test Conditions
V
= 1200V
Resistive Switching
V
V
GS
= 0V
GS
= 0V
T
GS
T
DD
OSS
OSS
= 4.7Ω
GS
DS
J
J
= 0 to 10V
= 125°C
= 0V
V
= 25°C, V
= 0V
= V
V
= 800V
= 50V
= 10V
,
GS
with V
with V
f = 1MHz
DS
V
DS
DS
DS
,
6
,
= ±30V
= 600V
+ 3.74E-11.
I
,
,
V
T
T
T
T
T
T
D
,
,
I
= 0V to 800V
,
DD
T
T
DS
V
J
J
J
J
J
J
DS
DS
D
I
I
,
= 250µA
D
I
D
J
J
GG
GS
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
D
= 1mA
I
= 25°C
= 125°C
= 800V,
D
D
= 25V
G
= 7A
= 7A
= 67% of V
= 67% of V
= 7A
= 0V
= 250µA
= 15V
= 7A,
D
S
(BR)DSS
(BR)DSS
1200
Min
Min
Min
2.5
.
. To calculate C
4765
350
135
145
Typ
Typ
Typ
1.12
3.03
13.5
1.41
1.11
15
55
70
24
70
26
15
85
24
-10
10
4
o(er)
1000
±100
Max
1.40
Max
Max
250
250
520
1.0
13
50
25
for any value of
5
mV/°C
V/°C
Unit
V/ns
Unit
Unit
µA
nA
nC
µC
pF
ns
ns
Ω
A
V
A
V
V
S