APT13F120B Microsemi Power Products Group, APT13F120B Datasheet - Page 4

MOSFET N-CH 1200V 13A TO-247

APT13F120B

Manufacturer Part Number
APT13F120B
Description
MOSFET N-CH 1200V 13A TO-247
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT13F120B

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 7A, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
145nC @ 10V
Input Capacitance (ciss) @ Vds
4765pF @ 25V
Power - Max
625W
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT13F120BMI
APT13F120BMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT13F120B
Manufacturer:
FSC
Quantity:
20 000
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
0.25
0.20
0.15
0.10
0.05
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
100
0.1
10
1
0
10
1
Dimensions in Millimeters and (Inches)
T
-5
T
Figure 9, Forward Safe Operating Area
J
V
C
=
DS
=
I
125°C
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
DM
75°C
, DRAIN-TO-SOURCE VOLTAGE (V)
D = 0.9
TO-247 (B) Package Outline
R ds(on)
Dissipated Power
0.7
0.3
0.1
6.15 (.242) BSC
0.5
0.05
4.50 (.177) Max.
10
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
13µs
(Watts)
100µs
1ms
10ms
100ms
DC line
10
15.49 (.610)
16.26 (.640)
-4
100
Figure 11, Transient Thermal Impedance Model
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
T
J
RECTANGULAR PULSE DURATION (seconds)
(°C)
1200
0.00457
0.0166
10
SINGLE PULSE
-3
e3 100% Sn Plated
0.0176
0.0688
0.270
0.114
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
0.46 (.018)
0.56 (.022)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
10
100
0.1
10
Figure 10, Maximum Forward Safe Operating Area
T
-2
1
C
1
(°C)
{3 Plcs}
Scaling for Different Case & Junction
Temperatures:
T
T
V
R ds(on)
J
C
I
1.22 (.048)
1.32 (.052)
D
DS
=
=
=
I
150°C
D
DM
, DRAIN-TO-SOURCE VOLTAGE (V)
25°C
I
D(T
Dimensions in Millimeters (Inches)
3
PAK Package Outline
C
= 25
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Note:
10
EXT
Peak T J = P DM x Z θJC + T C
15.95 (.628)
16.05(.632)
°
Revised
C)
4/18/95
are the external thermal
Duty Factor D =
*(
100µs
t
1
10
13µs
T
= Pulse Duration
J
1ms
10ms
100ms
-1
-
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
DC line
t 1
T
Gate
C
)/125
13.79 (.543)
13.99(.551)
t 2
Drain
100
Source
1.04 (.041)
1.15(.045)
1.27 (.050)
1.40 (.055)
t 1
/
t 2
APT13F120B_S
13.41 (.528)
13.51(.532)
1200
1.0
Revised
8/29/97
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
11.51 (.453)
11.61 (.457)

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