IRLMS5703TRPBF International Rectifier, IRLMS5703TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRLMS5703TRPBF
• Description: MOSFET P-CH 30V 2.4A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLMS5703TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 1.7W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.2Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 2.3A
• Power Dissipation: 1.7W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: Micro
• Channel Type: P
• Current, Drain: -2.4 A
• Gate Charge, Total: 7.2 nC
• Polarization: P-Channel
• Resistance, Drain To Source On: 0.18 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 1.1 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 400 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.3 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7.2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLMS5703PBFTR

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