STN1NK60Z STMicroelectronics, STN1NK60Z Datasheet - Page 11

• Manufacturer Part Number: STN1NK60Z
• Description: MOSFET N-CH 600V 300MA SOT223
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STN1NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 6.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 94pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 3300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3523-2

STQ1NK60ZR-AP, STN1NK60Z
Table 10.
Figure 24. SOT-223 mechanical data drawing
Dim.
e1
e4
l1
l2
a
b
d
g
L
c
f
SOT-223 mechanical data
B
C
C
b
L
f
a
Doc ID 9509 Rev 12
E
Min.
2.27
4.57
0.63
0.67
0.2
1.5
2.9
6.7
3.5
6.3
g
d
Typ.
0.65
mm
2.3
4.6
0.4
1.6
0.7
3.5
6.5
3
7
c
l2
Package mechanical data
Max.
2.33
4.63
0.67
0.32
0.73
e4
0.6
1.7
3.1
7.3
3.7
6.7
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P008B