STN1NK60Z STMicroelectronics, STN1NK60Z Datasheet - Page 5

• Manufacturer Part Number: STN1NK60Z
• Description: MOSFET N-CH 600V 300MA SOT223
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STN1NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 6.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 94pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 3300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3523-2

STQ1NK60ZR-AP, STN1NK60Z
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 9.
1.
BV
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
GSO
d(on)
d(off)
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
RRM
RRM
SD
I
Q
Q
t
SD
t
t
t
r
rr
rr
f
rr
rr
(2)
(1)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 9509 Rev 12
V
R
(see Figure 18)
I
I
di/dt = 100 A/µs,
V
I
di/dt = 100 A/µs,
V
Igs= ± 1 mA (open drain)
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
= 0.8 A, V
= 0.8 A,
= 0.8 A,
Test conditions
Test conditions
Test conditions
= 300 V, I
= 20 V
= 20V, Tj = 150 °C
GS
D
GS
= 0.4 A,
=0
= 10 V
Electrical characteristics
Min.
Min
Min.
30
Typ.
Typ.
5.5
135
216
140
224
Typ.
13
28
3.2
3.2
5
Max.
Max
Max.
0.8
2.4
1.6
Unit
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
V
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