IRLL024NTRPBF International Rectifier, IRLL024NTRPBF Datasheet - Page 2

• Manufacturer Part Number: IRLL024NTRPBF
• Description: MOSFET N-CH 55V 3.1A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLL024NTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current, Drain: 4.4 A
• Gate Charge, Total: 10.4 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 2.1 W
• Resistance, Drain To Source On: 0.065 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 18 ns
• Time, Turn-on Delay: 7.4 ns
• Transconductance, Forward: 3.3 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 100 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 4.4 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLL024NPBFTR; IRLL024NTRPBF; IRLL024NTRPBFTR

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Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
‚
Notes:
IRLL024NPbF
I
I
V
t
Q
t
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
S
SM
rr
on
DSS
GSS
d(on)
r
d(off)
f
SD
fs
2
rr
(BR)DSS
DS(on)
GS(th)
Repetitive rating; pulse width limited by
gs
gd
iss
oss
rss
Starting T
g
max. junction temperature. ( See fig. 11 )
R
(BR)DSS
G
= 25Ω, I
/∆T
J
J
= 25°C, L = 25 mH
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
= 3.1A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
Pulse width ≤ 300µs; duty cycle ≤ 2%.
I
T
SD
–––
Min. Typ. Max. Units
–––
––– 0.048 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
3.3
–––
–––
–––
–––
55
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ 150°C
≤ 1.9A, di/dt ≤ 270A/µs, V
–––
–––
10.4 15.6
–––
–––
––– 0.065
––– 0.080
––– 0.100
–––
–––
–––
–––
–––
510
140
––– -100
39
63
1.5
5.5
7.4
21
18
25
58
100
–––
–––
–––
–––
–––
12
1.0
–––
–––
250
–––
–––
3.1
58
94
2.0
2.3
8.3
25
V/°C
nC
ns
µA
nA
nC
ns
pF
V
Ω
A
V
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
V
D
D
J
J
DD
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 25°C, I
= 25°C, I
= 1.9A
= 1.9A
= 15 Ω, See Fig. 10 „
= 24 Ω
≤ V
= 0V, I
= 10V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 16V
= -16V
= 44V
= 28V
= 0V
= 25V
= 5.0V, I
= 4.0V, I
= 5.0V, See Fig. 6 and 9 „
(BR)DSS
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
D
D
= 1.9A
GS
GS
= 1.9A, V
Conditions
= 250µA
= 1.9 A
,
= 3.1A „
= 2.5A „
= 1.6A „
= 0V
= 0V, T
D
= 1mA
GS
J
= 125°C
= 0V „
S
+L
D
)