IRLL024NTRPBF International Rectifier, IRLL024NTRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLL024NTRPBF
• Description: MOSFET N-CH 55V 3.1A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLL024NTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current, Drain: 4.4 A
• Gate Charge, Total: 10.4 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 2.1 W
• Resistance, Drain To Source On: 0.065 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 18 ns
• Time, Turn-on Delay: 7.4 ns
• Transconductance, Forward: 3.3 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 100 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 4.4 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLL024NPBFTR; IRLL024NTRPBF; IRLL024NTRPBFTR

IRLL024NPbF
4
1000
800
600
400
200
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.4
1
Drain-to-Source Voltage

V
T = 150 C
V
J
DS
SD
0.6

Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
°
=
=
=
=
0V,
C
C
C

0.8
C iss
C oss
C rss
gs
gd
ds



T = 25 C
J
+ C
+ C
10
f = 1MHz
gd ,
gd
°
1.0
C
ds

SHORTED
V
1.2
GS
= 0 V
100
1.4
15
12
100
Fig 8. Maximum Safe Operating Area
0.1
9
6
3
0
10
1
0
0.1

Fig 6. Typical Gate Charge Vs.
I =
D

T
T
Single Pulse
C
J
= 25 C
= 150 C
1.9A

Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
4
°
°
G
, Drain-to-Source Voltage (V)
1
8
BY R

V
V
V
DS
DS
DS
10

DS(on)
= 44V
= 27V
= 11V
FOR TEST CIRCUIT
12
SEE FIGURE
www.irf.com

1 00us

1 ms

1 0ms
100
16
13
1000
20